发明名称 MAGNETIC READ SENSOR USING SPIN HALL EFFECT
摘要 <p>PROBLEM TO BE SOLVED: To provide a magnetic read sensor using the spin Hall effect.SOLUTION: The present invention provides a magnetic sensor utilizing the spin Hall effect to polarize electrons for use in measuring a magnetic field. The sensor eliminates the need for a pinned layer structure or antiferromagnetic layer (AFM layer), thereby achieving reduction in gap thickness required for increased data density. The sensor includes a non-magnetic electrically conductive layer, and the non-magnetic electrically conductive layer is configured to accumulate electrons predominantly of one spin at a side thereof when a current flows therethrough in the plane. A magnetic free layer is located adjacent to the side of the non-magnetic electrically conductive layer. A change in the direction of magnetization in the free layer relative to the orientation of the spin polarized electrons causes a change in voltage output of the sensor.</p>
申请公布号 JP2014154207(A) 申请公布日期 2014.08.25
申请号 JP20140023000 申请日期 2014.02.10
申请人 HGST NETHERLANDS B V 发明人 GORAN MIHAJLOVIC;PETRUS A VAN DER HEIJDEN
分类号 G11B5/39;G01R33/02;H01L29/82 主分类号 G11B5/39
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