| 摘要 |
PROBLEM TO BE SOLVED: To facilitate improvement of the performance of a semiconductor device, which is represented by reduction of on-resistance. ! SOLUTION: An n-type semiconductor region SNR for a source contact, and an n-type semiconductor region DNR for a drain contact are formed so that the distance between the n-type semiconductor region SNR for a source contact and the n-type semiconductor region DNR for a drain contact is smaller than the distance between a source electrode SE and a drain electrode DE. The source electrode SE is directly in contact with the n-type semiconductor region SNR for a source contact, and the drain electrode DE is directly in contact with the n-type semiconductor region DNR for a drain contact. Furthermore, the depth of the n-type semiconductor region SNR for a source contact and the depth of the n-type semiconductor region DNR for a drain contact are shallower than a heterojunction interface between a channel layer CH and an electron supply layer ES. ! COPYRIGHT: (C)2014 |
