A SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A manufacturing method of a semiconductor device according to an embodiment of the present invention comprises forming first gate patterns on a semiconductor substrate by using an etch mask pattern; forming a trench on the semiconductor substrate between the first gate patterns; forming an insulating layer filled in the trench on the etch mask pattern; performing planarization for the insulating layer to expose the upper surface of the etch mask pattern; forming an element isolation layer within the trench by etching a portion of the insulating layer; forming a second gate layer covering the upper surface of the etch mask pattern on the element isolation layer; and forming a second gate pattern by performing a planarization process of the second gate layer to expose the upper surface of the etch mask pattern.