| 摘要 |
The circuit (9) has a set of electronic components (1, 2) such as fully-depleted silicon-on-insulator FETs, and a buried insulating layer (92) of ultra-thin buried oxide layer type, that is placed under the set of electronic components. An electrode is connected to a voltage level (E1), and another electrode is connected to another voltage level (E2). An isolation trench (62) separates the former electrode and a third electrode. Another isolation trench (13) isolates the former electrode and falls short of an interface between a ground plane and a semi-conducting well (12). |
