MOULD FOR GALVANOPLASTY AND METHOD OF FABRICATING THE SAME

摘要

A top electrically conductive layer and a bottom electrically conductive layer (22) are deposited on the top and bottom of a silicon (Si) wafer (21). The wafer is secured to a substrate (23) using an adhesive layer (24). A portion of the conductive layer on top of the silicon wafer is removed and the wafer is etched towards the bottom conductive layer in the shape of the top conductive layer removal portion for forming a mould cavity (25). Independent claims are included for the following: (1) micromechanical component fabricating method; and (2) mould for fabricating a micromechanical component.