| 摘要 |
Provided is a nitride-based semiconductor light emitting diode. The nitride-based semiconductor light emitting diode comprises: a first semiconductor layer having first conductivity; a current diffusion layer which is located on the first semiconductor layer and has a nitride-based superlattice structure containing aluminum; a second semiconductor layer which is located on the current diffusion layer and has the first conductivity; an active layer which is located on the second semiconductor layer; and a third semiconductor layer which is located on the active layer and has a second conductivity. The current diffusion layer includes a nitride-based semiconductor layer which is not dopped; a first nitride-based semiconductor layer which is located on the undopped nitride-based semiconductor layer and contains aluminum of a certain component ratio; and a second nitride-based semiconductor layer which is located on the first nitride-based semiconductor layer and contains aluminum having a component ratio reduced in the active layer, thereby improving current diffusion in horizontal and vertical directions of the semiconductor layer having the first conductivity. |
