发明名称 |
SUBSTRATE RAPID THERMAL HEATING SYSTEM AND METHODS |
摘要 |
A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period. |
申请公布号 |
US2014235071(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201313771260 |
申请日期 |
2013.02.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG Nai-Han;YANG Chi-Ming |
分类号 |
H01L21/263;F27D11/12 |
主分类号 |
H01L21/263 |
代理机构 |
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代理人 |
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主权项 |
1. A system for heat treating substrates, said system comprising:
a heat slot configured to direct heat from a plurality of heat lamps to at least a section of a platen; the platen having a plurality of substrate receiving stations and being rotatable and translatable with respect to said heat slot; and a controller configured to control rotation and translation of said platen such that all portions of each of a plurality of substrates received on said substrate receiving stations are heated by said heat directed by said heat slot. |
地址 |
Hsin-Chu TW |