发明名称 SUBSTRATE RAPID THERMAL HEATING SYSTEM AND METHODS
摘要 A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period.
申请公布号 US2014235071(A1) 申请公布日期 2014.08.21
申请号 US201313771260 申请日期 2013.02.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHENG Nai-Han;YANG Chi-Ming
分类号 H01L21/263;F27D11/12 主分类号 H01L21/263
代理机构 代理人
主权项 1. A system for heat treating substrates, said system comprising: a heat slot configured to direct heat from a plurality of heat lamps to at least a section of a platen; the platen having a plurality of substrate receiving stations and being rotatable and translatable with respect to said heat slot; and a controller configured to control rotation and translation of said platen such that all portions of each of a plurality of substrates received on said substrate receiving stations are heated by said heat directed by said heat slot.
地址 Hsin-Chu TW