发明名称 Semiconductor device and manufacturing method thereof
摘要 <p>An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×1011 cm−3 or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.</p>
申请公布号 KR101432766(B1) 申请公布日期 2014.08.21
申请号 KR20087031516 申请日期 2007.05.16
申请人 发明人
分类号 H01L21/336;H01L21/8247;H01L27/115 主分类号 H01L21/336
代理机构 代理人
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