发明名称 |
SOURCE GAS SUPPLY DEVICE, DEPOSITION APPARATUS, MATERIAL SUPPLY METHOD AND STORAGE MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To provide a source gas supply device and the like excellent in responsibility and source gas flow rate stability.SOLUTION: A source gas supply device used for a deposition apparatus for performing deposition on a substrate W comprises: a carrier gas supply part 41 for supplying a carrier gas to a material container 3 which stores a liquid or solid material; a flow rate measurement part measures a flow rate of a vaporized material supplied to the deposition apparatus via a source gas supply route 210; and a control part 5 for comparing a flow rate measured value of the vaporized material with a preset target value to control a pressure control part PC1 so as to increase a pressure inside the material container 3 when the flow rate measured value is higher than the target value, and so as to decrease the pressure inside the material container 3 when the measured value is lower than the target value. |
申请公布号 |
JP2014150144(A) |
申请公布日期 |
2014.08.21 |
申请号 |
JP20130017491 |
申请日期 |
2013.01.31 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
INOUE MITSUYA;TAKADO MAKOTO |
分类号 |
H01L21/31;C23C16/448 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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