| 发明名称 |
C PARTICLE DISPERSED FE-PT-BASED SPUTTERING TARGET |
| 摘要 |
Provided is a sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, and the remainder being Fe. It is an object of the present invention to provide a high-density sputtering target that can produce a granular magnetic thin film without using any high-cost co-sputtering apparatuses and can also reduce the amount of particles generated during sputtering. |
| 申请公布号 |
US2014231250(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201214346355 |
申请日期 |
2012.12.18 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
Ogino Shin-ichi;Sato Atsushi;Nakamura Yuichiro |
| 分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, and Fe. |
| 地址 |
Tokyo JP |
