| 发明名称 |
PLASMA PROCESSING APPARATUS |
| 摘要 |
Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region. |
| 申请公布号 |
US2014231016(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201414159546 |
申请日期 |
2014.01.21 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YOSHIKAWA Jun;NOZAWA Toshihisa;MATSUMOTO Naoki;VENTZEK Peter L. G. |
| 分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing apparatus that generates plasma of a processing gas to process a workpiece, the plasma processing apparatus comprising:
a processing container configured to define a processing space; a mounting table including a mounting region where a workpiece accommodated in the processing container is mounted; and a microwave introducing antenna, wherein the microwave introducing antenna includes a dielectric window installed above the mounting table, and the dielectric window includes a bottom surface region that adjoins the processing space, the bottom surface region being formed in an annular shape to limit a region where a surface wave is propagated to a region above an edge of the mounting region. |
| 地址 |
Tokyo JP |
