DIODE AND SEMICONDUCTOR DEVICE INCLUDING BUILT-IN DIODE

摘要

A diode is provided with a pillar region formed so as to extend between a barrier region and an anode electrode, contact the barrier region, and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode. The barrier height adjusting region includes at least one component selected from the group consisting of a second conductivity type semiconductor having a concentration lower than that of an anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor. The barrier height adjusting region and the anode electrode are connected through a Schottky junction.

主权项

1. A diode comprising:
a cathode electrode; a cathode region made of a first conductivity type semiconductor; a drift region made of the first conductivity type semiconductor; an anode region made of a second conductivity type semiconductor; an anode electrode made of metal; a barrier region formed between the drift region and the anode region, and made of the first conductivity type semiconductor having a concentration higher than that of the drift region; a pillar region formed so as to extend between the barrier region and the anode electrode and contact the barrier region, and made of the first conductivity type semiconductor; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode, wherein the barrier height adjusting region includes at least one component selected from the group consisting of the second conductivity type semiconductor having a concentration lower than that of the anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor, and the barrier height adjusting region and the anode electrode are connected through a Schottky junction.