发明名称 |
THIN-FILM DEVICE, THIN-FILM DEVICE ARRAY, AND METHOD OF MANUFACTURING THIN-FILM DEVICE |
摘要 |
A thin-film device includes: a first device unit having a first gate electrode and a first crystalline silicon thin film located opposite to the first gate electrode; and a second device unit having a second gate electrode and a second crystalline silicon thin film located opposite to the second gate electrode. The first crystalline silicon thin film includes a strip-shaped first area and a second area smaller than the strip-shaped first area in average grain size. The first device unit has, as a channel, at least a part of the strip-shaped first area. The second silicon thin film includes a second crystalline area smaller than the strip-shaped first area in average grain size. The second device unit has the second crystalline area as a channel. The strip-shaped first area includes crystal grains in contact with the second area on each side of the strip-shaped first area. |
申请公布号 |
US2014231813(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201214346989 |
申请日期 |
2012.09.26 |
申请人 |
PANASONIC CORPORATION |
发明人 |
Oda Tomohiko;Kawashima Takahiro |
分类号 |
H01L27/12;H01L21/324;H01L21/02 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Osaka JP |