| 发明名称 |
NEAR INFRARED LIGHT SOURCE IN BULK SILICON |
| 摘要 |
A light emitting device (10) comprises a body (12) of a semiconductor material having a first face (14) and at least one other face (16). At least one pn-junction (18) in the body is located towards the first face and is configured to be driven via contacts on the body into a light emitting mode. The other face (16) of the body is configured to transmit from the body light emitted by the at least one pn-junction (18) in the near infrared part of the spectrum and having wavelengths longer than 1 μm. |
| 申请公布号 |
US2014231678(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201214345102 |
申请日期 |
2012.09.12 |
| 申请人 |
Du Plessis Monuko;Bogalecki Alfons Willi |
发明人 |
Du Plessis Monuko;Bogalecki Alfons Willi |
| 分类号 |
H01L33/34;H01L33/60;H01L25/16 |
主分类号 |
H01L33/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting device comprising:
a body of an indirect bandgap semiconductor material having a first face and at least one other face; at least one pn-junction light-emitting source in the body located towards the first face and configured to be driven via contacts on the body into a reverse biased breakdown light emitting mode; and the other face being configured to transmit from the body light emitted by the at least one pn-junction light source. |
| 地址 |
Pretoria ZA |
