SUSCEPTOR

摘要

A susceptor 10 includes a ceramic substrate 20 having a wafer-placing surface 20a; a first circular RF electrode 31 buried in the ceramic substrate 20; and a second circular RF electrode 32 buried in the ceramic substrate 20 at a depth different from the depth of the first RF electrode 31. The second RF electrode 32 has a larger diameter than the first RF electrode 31. The second RF electrode 32 has a plurality of holes with an opening area of 9.42 to 25.13 mm2 distributed in a portion overlapping the first RF electrode 31 in a plan view of the ceramic substrate 20. The electrode width between the holes is 3 to 7 mm.

主权项

1. A susceptor comprising:
a ceramic substrate having a wafer-placing surface; a first circular RF electrode buried in the ceramic substrate; and a second circular RF electrode buried in the ceramic substrate at a depth different from the depth of the first RF electrode, the second RF electrode having a larger diameter than the first RF electrode, wherein the second RF electrode has a plurality of holes with an opening area of 9.42 to 25.13 mm2 distributed in a portion overlapping the first RF electrode in a plan view of the ceramic substrate, the electrode width between the holes being 3 to 7 mm.