FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

The present application relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.

主权项

1. A ferroelectric memory device, comprising:
a ferroelectric capacitor; and a current limiter including a transistor which is electrically connected to the ferroelectric capacitor,wherein the ferroelectric capacitor includes a multilevel polarization state during a polarization switching process of the ferroelectric capacitor