CAPACITORS HAVING DIELECTRIC LAYERS WITH DIFFERENT BAND GAPS AND SEMICONDUCTOR DEVICES USING THE SAME

摘要

A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second dielectric layers may include the same dielectric material with different concentration of an impurity therein. A second electrode is disposed on the second dielectric layer.

主权项

1. A capacitor comprising:
a first electrode; a first dielectric layer on the first electrode; a second dielectric layer on the first dielectric layer, wherein the first and second dielectric layers comprise the same dielectric material with different concentration of an impurity therein; and a second electrode formed on the second dielectric layer.