发明名称 |
Fin Deformation Modulation |
摘要 |
A method includes forming a plurality of trenches extending from a top surface of a semiconductor substrate into the semiconductor substrate, with semiconductor strips formed between the plurality of trenches. The plurality of trenches includes a first trench and second trench wider than the first trench. A first dielectric material is filled in the plurality of trenches, wherein the first trench is substantially fully filled, and the second trench is filled partially. A second dielectric material is formed over the first dielectric material. The second dielectric material fills an upper portion of the second trench, and has a shrinkage rate different from the first shrinkage rate of the first dielectric material. A planarization is performed to remove excess second dielectric material. The remaining portions of the first dielectric material and the second dielectric material form a first and a second STI region in the first and the second trenches, respectively. |
申请公布号 |
US2014231919(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201313769783 |
申请日期 |
2013.02.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Peng Chih-Tang;Huang Tai-Chun;Lien Hao-Ming |
分类号 |
H01L21/762;H01L27/088 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
forming a plurality of trenches extending from a top surface of a semiconductor substrate into the semiconductor substrate, with semiconductor strips formed between the plurality of trenches, wherein the plurality of trenches comprises a first trench and second trench wider than the first trench; filling a first dielectric material in the plurality of trenches, wherein the first trench is substantially fully filled, and the second trench is filled partially, and wherein the first dielectric material has a first shrinkage rate; forming a second dielectric material over the first dielectric material, wherein the second dielectric material fills an upper portion of the second trench, and wherein the second dielectric material has a second shrinkage rate different from the first shrinkage rate; and performing a planarization to remove excess portions of the second dielectric material over the semiconductor substrate, wherein remaining portions of the first dielectric material and the second dielectric material form a first and a second Shallow Trench Isolation (STI) region in the first and the second trenches, respectively. |
地址 |
Hsin-Chu TW |