发明名称 LITHOGRAPHY AND ETCHING METHOD FOR LEAD HOLE
摘要 A lithography and etching method for a lead hole comprises: forming aluminum wiring on a wafer, the aluminum wiring comprising an aluminum layer (130) and a protection layer (120) located on an upper surface of the aluminum layer; depositing passivation medium on the aluminum wiring to form a passivation layer (110), and performing lithography; performing passivation corrosion, the protection layer being partially or completely remained under the passivation corrosion; coating a surface of the wafer with polyimide ; coating a surface of the polyimide with photoresist and performing exposure, development, and lithography; performing passivation corrosion again until the protection layer is completely removed; and solidifying the polyimide. In the step of first passivation corrosion, the protection layer above the aluminum layer at the lead hole is remained, so that the aluminum layer is not corroded by the developing liquid in the lithography step of polyimide. In addition, after lithography of polyimide, reworking of the polyimide is performed if necessary, and then the remained protection layer can protect the aluminum layer during the reworking, thereby implementing online reworking of the polyimide process.
申请公布号 WO2014124586(A1) 申请公布日期 2014.08.21
申请号 WO2013CN91027 申请日期 2013.12.31
申请人 CSMC TECHNOLOGIES FAB2 CO., LTD. 发明人 HUANG, WEI
分类号 H01L21/768;G03F7/20;G03F7/42;H01L21/02 主分类号 H01L21/768
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