发明名称 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device according to an embodiment of the invention includes applying a resist on a substrate surface in a resist application apparatus, light-exposing the resist on the substrate surface in a light exposure apparatus, and after the light-exposing the resist, developing the resist in a development apparatus. The resist is a negative resist. The developing the resist includes mounting the substrate on a support stage including a rotating mechanism of the development apparatus, after the mounting the substrate on the support stage, developing the resist, after the mounting the substrate on the support stage, removing the resist on a peripheral edge of the substrate, and after the developing the resist, and after the removing the resist on the peripheral edge of the substrate, dismounting the substrate from the support stage.
申请公布号 US2014234782(A1) 申请公布日期 2014.08.21
申请号 US201313937513 申请日期 2013.07.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OORI Tomoya
分类号 G03F7/42;G03F7/20 主分类号 G03F7/42
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device, comprising: applying a resist on a substrate surface in a resist application apparatus; light-exposing the resist on the substrate surface in a light exposure apparatus; and after the light-exposing the resist, developing the resist in a development apparatus, the resist being a negative resist, and the developing the resist including: mounting the substrate on a support stage including a rotating mechanism of the development apparatus;after the mounting the substrate on the support stage, developing the resist;after the mounting the substrate on the support stage, removing the resist on a peripheral edge of the substrate; andafter the developing the resist, and after the removing the resist on the peripheral edge of the substrate, dismounting the substrate from the support stage.
地址 Minato-ku JP