THROUGH SUBSTRATE VIA (TSUV) STRUCTURES AND METHOD OF MAKING THE SAME

摘要

Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.

主权项

1. A microelectronic device, comprising:
a substrate; a through substrate via (TSuV) extending through the substrate; a dielectric liner disposed over a sidewall of the TSuV and substrate surface; and a via metal disposed in the via, wherein the via metal is in direct contact with the dielectric liner, and wherein the via metal is of homogenous composition across the diameter of the TSuV.