| 摘要 |
Provided is a semiconductor device in which on-resistance is largely reduced. In a region (2a) of an N type epitaxial layer (2) of the semiconductor device 20, each region between neighboring trenches (3) is blocked with a depletion layer (14) formed around a trench (3) so that a current passage (12) is interrupted, while a part of the depletion layer (14) formed around the trench (3) is deleted so that the current passage (12) is opened. In a region (2b), a junction portion (8) between the N type epitaxial layer (2) and a P+ type diffusion region (7) makes a Zener diode (8). |
