Super Junction Semiconductor Device with Overcompensation Zones

摘要

According to an embodiment, a super junction semiconductor device may be manufactured by introducing impurities of a first impurity type into an exposed surface of a first semiconductor layer of the first impurity type, thus forming an implant layer. A second semiconductor layer of the first impurity type may be provided on the exposed surface and trenches may be etched through the second semiconductor layer into the first semiconductor layer. Thereby first columns with first overcompensation zones obtained from the implant layer are formed between the trenches. Second columns of the second conductivity type may be provided in the trenches. The first and second columns form a super junction structure with a vertical first section in which the first overcompensation zones overcompensate a corresponding section in the second columns.

主权项

1. A method of manufacturing a super junction semiconductor device, the method comprising:
introducing impurities of a first impurity type into an exposed surface of a first semiconductor layer of the first impurity type to form an implant layer; providing a second semiconductor layer of the first impurity type on the exposed surface; etching trenches through the second semiconductor layer into the first semiconductor layer, wherein between the trenches first columns with first overcompensation zones obtained from the implant layer are formed; and providing second columns of the second conductivity type in the trenches, wherein the first and second columns form a super junction structure with a vertical first section in which the first overcompensation zones overcompensate a corresponding section in the second columns.