Direct band gap wurtzite semiconductor nanowires

摘要

Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

主权项

1. A method for wurtzite semiconductor growth, the method comprising:
providing vapor phase epitaxy (VPE) precursors for a first composition including a Gallium (Ga) precursor as a group III species and a Phosphorus (P) precursor as a group V species; performing VPE of the first composition having a hexagonal crystal structure with a direct band gap.