SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

摘要

Using an SOI substrate in which a surface-side semiconductor layer, an insulating layer, and a rear-face-side semiconductor layer are stacked in order, to mass-produce a vertical semiconductor device in which thickness of a semiconductor layer is managed. With respect to the surface of an SOI substrate, processing performed from the surface is applied, etching is performed from the rear face of the SOI substrate to remove the rear-face-side semiconductor layer and the insulating layer in order to expose the rear face of the surface-side semiconductor layer, and with respect to the exposed rear face of the surface-side semiconductor layer, processing performed from the rear face is applied. It is possible to accurately manage thickness of the surface-side semiconductor layer of the SOI substrate, and therefore, a semiconductor device having a semiconductor layer of the same thickness as the surface-side semiconductor layer can be mass-produced. In areas that are not active areas in which a semiconductor structure functioning as a semiconductor device has been formed, it is not necessary to remove the rear-face-side semiconductor layer and the insulating layer. In active areas, the insulating layer and the rear-face-side semiconductor layer are removed, and in peripheral voltage regions, it is possible to mass-produce a vertical semiconductor device in which the insulating layer and the rear-face-side semiconductor layer remain. Therefore, it is possible to mass-produce, with a superior yield, high-performance semiconductor devices.