发明名称 |
ROLLED-UP, THREE-DIMENSIONAL FIELD-EFFECT TRANSISTORS AND THE USE THEREOF IN ELECTRONICS, SENSORS AND MICROFLUIDICS |
摘要 |
Field-effect transistors include at least two thin layers of a semiconductor material and of an electrically conductive gate material that are rolled up together. These two layers are arranged separated from one another by one or multiple barrier layers and this rolled-up multi-layer structure is integratable as field-effect transistors in circuits and/or in microfluid systems as sensors for the detection of fluids. |
申请公布号 |
US2014234977(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201314094135 |
申请日期 |
2013.12.02 |
申请人 |
LEIBNIZ-INSTITUT FUER FESTKOERPER-UND WERKSTOFFFORSCHUNG DRESDEN E.V |
发明人 |
GRIMM Daniel;SCHMIDT Oliver G.;BUFON Carlos Cesar Bof |
分类号 |
G01N27/414 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
1. Field-effect transistors composed of at least two thin layers of a semiconductor material (1) and of an electrically conductive gate material (2) rolled up together, wherein these two layers are arranged separated from one another by one or multiple barrier layers (3) and wherein this rolled-up multi-layer structure is integrated as field-effect transistors in circuits and/or in microfluid systems as sensors for the detection of fluids. |
地址 |
Dresden DE |