PHOTO RESIST (PR) PROFILE CONTROL

摘要

One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first window. A third window is formed within the first PR layer during a second exposure without a mask. Because, the third window is formed while the first shield layer and the second PR layer are on the first PR layer, a profile associated with the first PR layer is controlled. Contamination during ion bombardment is mitigated due to the controlled profile.

主权项

1. A method for controlling a profile of photo resist (PR) structure, comprising:
forming a first photo resist (PR) layer on a base material; forming a first shield layer on the first PR layer; forming a second PR layer on the first shield layer; forming a first window within the second PR layer; forming a second window within the first shield layer based on the first window within the second PR layer; and forming a third window within the first PR layer based on the second window within the second PR layer, thereby controlling a profile associated with the first PR layer.