发明名称 3D SEMICONDUCTOR DEVICE
摘要 A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.
申请公布号 US2014233292(A1) 申请公布日期 2014.08.21
申请号 US201414262693 申请日期 2014.04.25
申请人 Samsung Electronics Co., Ltd. 发明人 Kang Uk-song;Jang Dong-hyeon;Jang Seong-jin;Lee Hoon;Kim Jin-ho;Kim Nam-seog;Moon Byung-sik;Lee Woo-dong
分类号 H01L23/48;G11C8/18;G11C5/06 主分类号 H01L23/48
代理机构 代理人
主权项
地址 Suwon-si KR