| 摘要 |
Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package (4) includes a die pad (61), a source lead (63), a first MOSFET (11), and a first Schottky barrier diode (21). A source electrode (11S) of the first MOSFET (11), an anode electrode (21A) of the first Schottky barrier diode (21), and the source lead (63) are electrically connected by the bonding wire (31), one end of which is bonded to the source electrode (11S) of the first MOSFET (11), the other end of which is bonded to the source lead (63), and the center of which is bonded to the anode electrode (21A) of the first Schottky barrier diode (21). |
| 主权项 |
1. A semiconductor device comprising:
a die pad; a bipolar device die-bonded to a surface of the die pad, the bipolar device having a first electrode pad on a surface opposite to a die-bonded surface; a unipolar device die-bonded to the surface of the die pad, the unipolar device having a second electrode pad to be connected electrically to the first electrode pad on a surface opposite to a die-bonded surface; a conductive member disposed laterally to the die pad to be connected electrically with the second electrode pad; and a bonding wire, one end of which is bonded to the first electrode pad, the other end of which is bonded to the conductive member, and the center of which is bonded to the second electrode pad, wherein a first wire portion of the bonding wire between the portion bonded to the first electrode pad and the portion bonded to the second electrode pad is at an angle of 90 degrees or more, in a plan view, with respect to a second wire portion of the bonding wire between the portion bonded to the second electrode pad and the portion bonded to the conductive member. |
