pHEMT and HBT integrated epitaxial structure

摘要

An improved pseudomorphic high electron mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) integrated epitaxial structure, in which the structure comprises a substrate, a pHEMT structure, an etching-stop spacer layer, and an HBT structure. The pHEMT structure comprises a buffer layer, a bottom barrier layer, a first channel spacer layer, a channel layer, a second channel spacer layer, a Schottky spacer layer, a Schottky donor layer, a Schottky barrier layer, an etching-stop layer, and at least one cap layer. By introducing the first channel spacer layer and the second channel spacer layer to reduce the density of the dislocations and to reduce the compressive strain in the pseudomorphic channel layer.

主权项

1. An improved pseudomorphic high electron mobility transistor (pHEMT) structure, comprising:
a substrate; a buffer layer formed on said substrate; a bottom barrier layer formed on said buffer layer; a first channel spacer layer formed on said bottom barrier layer; a channel layer formed on said first channel spacer layer, wherein said channel layer is composed of InxGa1-xAs compound semiconductor with the Indium content 0.2