发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a semiconductor substrate and a first electrode. An element region, and a non-element region that surrounds this element region, are formed on the semiconductor substrate. The first electrode is arranged on the semiconductor substrate and is electrically connected to the element region formed on the semiconductor substrate. The first electrode is made of at least two materials having different moduli of elasticity. A modulus of elasticity per unit area of an outer peripheral portion of the first electrode when the semiconductor substrate is viewed from above is smaller than a modulus of elasticity per unit area of a center portion of the first electrode.
申请公布号 US2014231868(A1) 申请公布日期 2014.08.21
申请号 US201414166215 申请日期 2014.01.28
申请人 NAGAOKA Tatsuji 发明人 NAGAOKA Tatsuji
分类号 H01L29/423;H01L29/739 主分类号 H01L29/423
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate on which an element region is formed; and a first electrode that is arranged on the semiconductor substrate and is electrically connected to the element region formed on the semiconductor substrate, wherein the first electrode is made of at least two materials with different moduli of elasticity, and a modulus of elasticity per unit area of an outer peripheral portion of the first electrode when the semiconductor substrate is viewed from above is smaller than a modulus of elasticity per unit area of a center portion of the first electrode.
地址 Nagakute-shi JP