发明名称 LIGHT EMITTING DEVICE
摘要 A first light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. A second light emitting structure includes a third semiconductor layer, an active layer, and a fourth semiconductor layer. A first electrode and a second electrode connect to the first semiconductor layer, and the second semiconductor layer, respectively. A third electrode and a fourth electrode connect to the third semiconductor layer, and the fourth semiconductor layer, respectively. A first contact portion includes a first region connected to the first electrode and a second region making contact with a top surface of the first semiconductor layer, and a second contact portion connects to the second and third electrodes. A third contact portion includes a first region connected to the third electrode and a second region making contact with a top surface of the third semiconductor layer.
申请公布号 US2014231833(A1) 申请公布日期 2014.08.21
申请号 US201414171191 申请日期 2014.02.03
申请人 JEONG Hwan Hee 发明人 JEONG Hwan Hee
分类号 H01L33/36;H01L33/08 主分类号 H01L33/36
代理机构 代理人
主权项 1. A light emitting device comprising: a first light emitting structure having a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer under the first active layer; a second light emitting structure having a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer; a first electrode electrically connected to the first conductive first semiconductor layer and provided under the first light emitting structure; a second electrode electrically connected to the second conductive second semiconductor layer and provided under the first light emitting structure; a third electrode electrically connected to the first conductive third semiconductor layer and provided under the second light emitting structure; a fourth electrode electrically connected to the second conductive fourth semiconductor layer and provided under the second light emitting structure; a first contact portion provided through the first light emitting structure and comprising a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive first semiconductor layer; a second contact portion electrically connected to the second and third electrodes; and a third contact portion provided through the second light emitting structure and comprising a first region electrically connected to the third electrode and a second region making contact with a top surface of the first conductive third semiconductor layer.
地址 Seoul KR