摘要 |
A first light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. A second light emitting structure includes a third semiconductor layer, an active layer, and a fourth semiconductor layer. A first electrode and a second electrode connect to the first semiconductor layer, and the second semiconductor layer, respectively. A third electrode and a fourth electrode connect to the third semiconductor layer, and the fourth semiconductor layer, respectively. A first contact portion includes a first region connected to the first electrode and a second region making contact with a top surface of the first semiconductor layer, and a second contact portion connects to the second and third electrodes. A third contact portion includes a first region connected to the third electrode and a second region making contact with a top surface of the third semiconductor layer. |