DIAMOND GaN DEVICES AND ASSOCIATED METHODS

摘要

Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing a semiconductor layer on the buffer layer. In one specific aspect, the c-axis of the buffer layer is oriented perpendicular to the working surface of the diamond layer.

主权项

1. A method of making a semiconductor device, comprising:
polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer.