REMOTE DOPING OF ORGANIC THIN FILM TRANSISTORS

摘要

Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above.

主权项

1. A p-doped field effect transistor comprising
a) a channel layer comprising at least one organic semiconductor channel material; b) a dopant layer, which comprises at least one p-dopant material and optionally at lease one organic hole transport material; c) a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising at least one organic semiconductor spacer material; d) source and drain electrodes in electrical contact with the channel layer, and e) a gate electrode in contact with a gate insulating layer.