发明名称 MONOLITHICALLY ISLED BACK CONTACT BACK JUNCTION SOLAR CELLS USING BULK WAFERS
摘要 <p>According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.</p>
申请公布号 WO2014127067(A1) 申请公布日期 2014.08.21
申请号 WO2014US16140 申请日期 2014.02.12
申请人 SOLEXEL, INC.;MOSLEHI, MEHRDAD, M.;KAPUR, PAWAN;KRAMER, KARL-JOSEF;WINGERT, MICHAEL 发明人 MOSLEHI, MEHRDAD, M.;KAPUR, PAWAN;KRAMER, KARL-JOSEF;WINGERT, MICHAEL
分类号 H01L31/04;H01L31/0224;H01L31/18 主分类号 H01L31/04
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