| 摘要 |
<p>Proposed are: a semiconductor integrated circuit board, which is capable of enhancing the degree of freedom of the design of an integrated circuit; and a method for manufacturing the semiconductor integrated circuit board. With respect to this semiconductor integrated circuit board (1), an opening (4), from which the surface of an Si supporting substrate (2) is exposed, is formed in an SiO2 layer (3); a selective growth mask layer (6) is formed on the SiO2 layer (3) so as to surround the opening (4); and a group III-V compound semiconductor layer (7) is formed within a recessed region (ER1) that is surrounded by the selective growth mask layer (6). During the manufacturing of this semiconductor integrated circuit board (1) having such a configuration, the group III-V compound semiconductor layer (7) can be formed only in the recessed region (ER1) by merely epitaxially growing a group III-V compound within the recessed region (ER1), which is at a desired position surrounded by the selective growth mask layer (6), since the selective growth mask layer (6) serves as a barrier. Consequently, the degree of freedom of the design of an integrated circuit can be enhanced.</p> |
