THIN FILM, METHOD OF FORMING THIN FILM, SEMICONDUCTOR DEVICE INCLUDING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device are disclosed. The disclosed method of forming the thin film may include the step of forming a thin film containing metal oxynitride, and the step of treating the thin film with inert gas ions. The metal oxynitride may include zinc oxynitride (ZnOxNy). The inert gas ions may include at least one of Ar and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like. The thin film can be applied to a semiconductor device such as a transistor.