摘要 |
PROBLEM TO BE SOLVED: To provide a contact formation method using ink containing a silicide formation metal, and to provide an electric device such as a diode and/or a transistor including that contact and a local interconnection.SOLUTION: A method for forming a metal silicide contact includes a step for depositing a silicide formation metal ink on the exposed silicon surface, a step for forming a silicide formation metal precursor by drying the ink, and a step for forming a metal silicide contact by heating the silicide formation metal precursor and the silicon surface. A metal-containing interconnection can be formed by optionally depositing a metal precursor ink selectively on a dielectric layer adjoining the exposed silicon surface. Furthermore, one or a plurality of bulk conductive metals may be deposited on the remaining metal precursor ink and/or the dielectric layer. A diode, a transistor, and the like, can be manufactured using such a printed contact and/or a local interconnection. |