发明名称 |
STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N |
摘要 |
A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. |
申请公布号 |
US2014237322(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201414264303 |
申请日期 |
2014.04.29 |
申请人 |
Apple Inc. |
发明人 |
Shalvi Ofir;Sommer Naftali;Perlmutter Uri;Sokolov Dotan |
分类号 |
G06F11/10 |
主分类号 |
G06F11/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus, comprising:
a processing unit configured to receive a first command from a host to read data from a memory, wherein the memory includes a plurality of planes; and an interface coupled to the memory, wherein the interface is configured to:
send a second command to the memory to read data from a first plane of the plurality of planes responsive to the processing unit receiving the first command; andreceive data from the first plane of the plurality of planes; wherein the processing unit is further configured to decode an Error Correction Code (ECC) of the data read from the first plane of the plurality of planes; wherein the interface is further configured to send, in parallel to the processing unit decoding the ECC of the data read from the first plane, a third command to the memory to read data from a second plane of the plurality of planes. |
地址 |
Cupertino CA US |