主权项 |
1. A semiconductor device comprising:
a substrate having at least one layer of semiconductor material formed on an upper surface thereof; a vertical cavity surface emitting laser disposed on the upper surface of the at least one layer of semiconductor material, the vertical cavity surface emitting laser having a first distributed Bragg reflector formed in a first set of layers, wherein at least one of the first set of layers is of an n-type material, a cavity containing a light-emitting material disposed on top of the first plurality of layers, a second distributed Bragg reflector formed in a second set of layers, and a first p++ layer disposed on the second set of layers, wherein at least one of the second set of layers is of a p-type material, the vertical cavity surface emitting laser having an oxide layer proximal to the intrinsic layer arranged in the second set of layers, the oxide layer defining an aperture; a protection diode for protecting the vertical cavity surface emitting laser from electrostatic discharge events disposed on the first p++ layer located above the aperture, the protection diode having at least one layer of n-type semiconductor material disposed on the first p++ layer, an intrinsic layer disposed on the at least one layer of n-type semiconductor material, and a second p++ layer disposed on the intrinsic layer; an ohmic p-type contact pad and an ohmic n-type contact pad in contact with the vertical cavity surface emitting laser and protection diode; a first metal interconnect connecting the p-contact pad of the vertical cavity surface emitting laser with the n-contact of the protection diode; and a second metal interconnect connecting the n-contact pad of the vertical cavity surface emitting laser with the p-contact of the protection diode. |