| 发明名称 |
FINFET AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A FinFET and a method for manufacturing the same are disclosed. In one aspect, the method comprises forming a semiconductor fin having trapezoid cross-section. The method also includes forming one of a source region and a drain region. The method also includes forming a sacrificial spacer. The method also includes forming another one of the source region and the drain region using the sacrificial spacer as a mask. The method also includes removing the sacrificial spacer. The method also includes forming a gate stack in place of the sacrificial spacer, the gate stack comprising a gate conductor and a gate dielectric isolating the gate conductor from the semiconductor fin. |
| 申请公布号 |
US2014231917(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201414223950 |
申请日期 |
2014.03.24 |
| 申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
Zhu Huilong |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a FinFET, comprising:
forming a semiconductor fin having a trapezoid cross-section; forming one of a source region and a drain region; forming a sacrificial spacer; forming another one of the source region and the drain region using the sacrificial spacer as a mask; removing the sacrificial spacer; and forming a gate stack in place of the sacrificial spacer, the gate stack comprising:
a gate conductor; anda gate dielectric isolating the gate conductor from the semiconductor fin. |
| 地址 |
Beijing CN |
