LDMOS DEVICE WITH DOUBLE-SLOPED FIELD PLATE

摘要

In one general aspect, an apparatus can include a channel region disposed in a semiconductor substrate, a gate dielectric disposed on the channel region and a drift region disposed in the semiconductor substrate adjacent to the channel region. The apparatus can further include a field plate having an end portion disposed between a top surface of the semiconductor substrate and the gate dielectric The end portion can include a surface in contact with the gate dielectric, the surface having a first portion aligned along a first plane non-parallel to a second plane along which a second portion of the surface is aligned, the first plane being non-parallel to the top surface of the semiconductor substrate and the second plane being non-parallel to the top surface of the semiconductor substrate.

主权项

1. A laterally diffused metal oxide semiconductor (LDMOS) transistor, comprising:
a source region disposed in a semiconductor substrate; a drain region disposed in the semiconductor substrate; a channel region disposed in the semiconductor substrate between the source region and the drain region; a drift region disposed in the semiconductor substrate between the channel region and the drain region; a field dielectric plate disposed on the semiconductor substrate over at least a portion of the drift region; and a gate electrode disposed on at least a portion of the field dielectric plate, the field dielectric plate including:
a first portion having a surface in contact with the gate electrode, the surface of the first portion having a first slope relative to a surface of the semiconductor substrate; anda second portion disposed on the first portion and having a surface in contact with the gate electrode, the surface of the second portion having a second slope relative to the surface of the semiconductor substrate, the second slope being different than the first slope.