CRYSTAL LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT

摘要

Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the Ga2O3 substrate is no less than 1.0×1018/cm3.

主权项

1. A crystal layered structure, comprising:
a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal containing oxygen as an impurity on the buffer layer, wherein an oxygen concentration in a region on a side of the Ga2O3 substrate of the nitride semiconductor layer, region having a thickness of not less than 200 nm, is not less than 1.0×1018/cm3.