| 摘要 |
<p>The present invention provides a method for manufacturing a semiconductor device which has a tolerance to HF and the high productivity of a thin film with a low dielectric constant at a low temperature region, a substrate processing apparatus, and a recording medium. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes a process of forming a thin film containing a preset element, boron, carbon, and nitrogen on a substrate by performing, predetermined times, a cycle which includes a process of forming a first layer containing boron and halogen group by supplying a first raw gas containing boron and a halogen group with regard to the substrate and a process of forming a second layer containing a preset element, boron, carbon, and nitrogen by reforming the first layer by supplying a second raw gas containing an preset element and an amino group with regard to the substrate.</p> |
