发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF THE FABRICATING THE SAME |
摘要 |
<p>A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate which includes a device isolation layer which defines an active part, word lines which cross the active part and are buried in the semiconductor substrate, a bit line which intersects with the word lines on the active layer, and a first spacer which partly covers the sidewall of the bit line. The bit line is in contact with the upper surface of the active part. The first spacer is separated from the upper surface of the active part.</p> |
申请公布号 |
KR20140102028(A) |
申请公布日期 |
2014.08.21 |
申请号 |
KR20130015409 |
申请日期 |
2013.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DAE IK;SON, NAK JIN;HWANG, YOO SANG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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