| 发明名称 |
Method for Forming a Power Semiconductor Device |
| 摘要 |
A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor. |
| 申请公布号 |
US2014235058(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201414260352 |
申请日期 |
2014.04.24 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Mauder Anton;Schulze Hans-Joachim;Hirler Franz;Lehnert Wolfgang;Berger Rudolf;Pruegl Klemens;Strack Helmut |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for forming a semiconductor device, the method comprising:
providing a semiconductor body which comprises a main surface and a first n-type semiconductor region; forming a trench which extends from the main surface into the first n-type semiconductor region; and forming a dielectric layer comprising fixed negative charges on a surface of the trench, comprising performing at least one atomic layer deposition using an organometallic precursor. |
| 地址 |
Villach AT |
