| 摘要 |
The invention relates to an epitaxial group-ill-nitride buffer-layer structure (100) on a heterosubstrate, wherein the buffer-layer structure (100) comprises at least one stress- management layer sequence S including an interlayer structure (530) arranged between and adjacent to a first and a second group-ill-nitride layer (120, 140), wherein the inter¬layer structure (530) comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers (120, 140), and wherein a p-type-dopant-concentration profile drops, starting from at least 1 x1018 cm-3, by at least a factor of two in transition from the interlayer structure (530) to the first and second group-ill-nitride layers (120, 140). |
