| 摘要 |
Provided is a technology that is capable of improving linearity of capacitance characteristics while sufficiently ensuring mass production, and, in addition, is capable of reducing a collector-base capacitance. P-type second semiconductor layers (3b, 3d) are disposed between n-type first semiconductor layers (3a, 3c, 3e). Since the apparent doping concentration of an entire collector layer (3) can be reduced without lowering the doping concentrations of the first semiconductor layers (3a, 3c, 3e), the linearity of capacitance characteristics can be improved while sufficiently ensuring mass production. Furthermore, since the average carrier concentration of the entire collector layer (3) can be reduced by disposing the second semiconductor layers (3b, 3e) between the first semiconductor layers (3a, 3c, 3e), and a depletion layer is widely formed inside the collector layer, a collector-base capacitance can be reduced. |
