METHOD OF MANUFACTURING FLAKE-LIKE OXIDE SEMICONDUCTOR, METHOD OF MANUFACTURING OXIDE SEMICONDUCTOR FILM, METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND METHOD OF FORMING PIXEL ELECTRODE OF LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a flake-like oxide semiconductor, a method of manufacturing an oxide semiconductor film, a method of manufacturing a thin-film transistor, and a method of forming a pixel electrode of a liquid crystal display device, capable of forming a high-performance oxide semiconductor film on a substrate at a low temperature.SOLUTION: A method of manufacturing a flake-like oxide semiconductor includes: immersing a substrate having a swelling property to predetermined liquid and having an oxide semiconductor film formed thereon into the liquid, and thereby, peeling the oxide semiconductor film from the substrate; and dispersing the peeled oxide semiconductor film into the liquid to make it flaky.