METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING BUNDLE GROUP OF CARBON NANO-TUBE SUITABLE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device such as a transistor, using a bundle group of carbon nano-tubes not containing dispersion liquid/metal fine particles, and a field effect transistor which is one of a semiconductor device, capable of controlling current in from 0.1 ampere level to several ampere by using the bundle group of carbon nano-tubes, while suppressing the leak current.SOLUTION: A field effect transistor 1 comprises: a source electrode 3; a drain electrode 4; a gate 8; and a channel 7 consisting of a bundle group of carbon nano-tube not containing dispersion liquid/metal fine particles, between the source electrode 3 and the drain electrode 4. Therefore it is possible to very easily provide a configuration specialized for current value and a configuration specialized for switching operation by only changing an orientation of carbon nano-tubes of the channel.